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US 11,097,554 B2Granted
Thermal printhead and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsGoro Nakatani, Akira Fujita, Kazuya Nakakubo, Yasuhiro Fuwa
Life of this patent
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Abstract
A thermal printhead includes a substrate, a protrusion formed on an obverse surface of the substrate and extending in a main scanning direction, a heat storage layer formed on a top surface of the protrusion, and a plurality of heat-generating parts arranged along the main scanning direction on the heat storage layer. The substrate and the protrusion are integrally formed from a single-crystal semiconductor.
Claims16
A thermal printhead comprising:
- a substrate having an obverse surface;
- a protrusion formed on the obverse surface of the substrate and extending in a main scanning direction;
- a heat storage layer formed on a top surface of the protrusion;
- and
- a plurality of heat-generating parts arranged along the main scanning direction on the heat storage layer,
- wherein the substrate and the protrusion are integrally formed from a single-crystal semiconductor,
- the heat storage layer has a bottom surface that extends over an entire width of the top surface of the protrusion in a sub-scanning direction,
- the protrusion has a pair of inclined outer surfaces extending from ends of the top surface in the sub-scanning direction to the obverse surface, and
- the heat storage layer has an outer surface opposite to the bottom surface, the outer surface connecting directly to the inclined outer surfaces in the sub-scanning direction.
6 more elements
A method for manufacturing a thermal printhead comprising:
- a substrate having an obverse surface;
- a protrusion formed on the obverse surface of the substrate and extending in a main scanning direction;
- a heat storage layer formed on a top surface of the protrusion;
- and a plurality of heat-generating parts arranged along the main scanning direction on the heat storage layer, the substrate and the protrusion being integrally formed from a single-crystal semiconductor,
- the method comprising:
- forming a glaze layer of a predetermined thickness on an obverse surface of a material substrate of a single-crystal semiconductor;
- forming an intermediate glaze by subjecting the glaze layer to wet-etching, the intermediate glaze having a predetermined width in a sub-scanning direction and extending in the main scanning direction;
- and
- forming the protrusion by anisotropic etching of the material substrate in a manner such that the protrusion has a top surface covered by the intermediate glaze.
6 more elements
Dependencies are inferred from the claim text.