Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakafumi Yamada
Life of this patent
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Abstract
A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.
Claims5
A semiconductor device comprising:
- a semiconductor chip including a semiconductor substrate having a top surface, a top surface electrode deposited on the top surface of the semiconductor substrate, an insulating film selectively covering edges of a top surface of the top surface electrode, and a plating layer covering the top surface of the top surface electrode exposed to an opening of the insulating film;
- a metal wiring plate including a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part;
- and
- a solder part filling the groove so as to bond the plating layer and the bottom surface of the junction part together,
- wherein a boundary between the insulating film and the plating layer is encompassed within the groove in a plan view, and
- the solder part has a thickness greater on the boundary than on the plating layer.
Dependencies are inferred from the claim text.