Resonator coil having an asymmetrical profile
AssigneeApplied Materials, Inc.
InventorsCostel Biloiu, Michael Honan, Robert B Vopat, David Blahnik, Charles T. Carlson, Frank Sinclair, Paul Murphy
Life of this patent
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Abstract
Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.
Claims19
A resonator, comprising:
- a housing;
- and
- at least one coil disposed within the housing, the at least one coil comprising:
- a first end coupled to an electrode, the electrode operable to accelerate ions;
- a central section connected to the first end, the central section extending helically about a central axis, wherein an inner side of the central section has a flattened surface, and wherein an outer side of the central section has a curved profile;
- and
- a second end connected to the central section, the second end coupled to the housing.
A resonator of an ion implanter, the resonator comprising:
- a housing defining an internal cavity;
- a first coil partially disposed within the internal cavity, the first coil comprising:
- a first end coupled to a first electrode, the first electrode including a first opening for receiving an ion beam;
- and
- a first central section connected with the first end, wherein the first central section includes a first plurality of loops extending helically about a central axis, wherein each of the first plurality of loops has a first flattened surface, and wherein an outer side of the first plurality of loops has a curved profile;
- and
- a second coil adjacent the first coil, the second coil comprising:
- a second end coupled to a second electrode, the second electrode including a second opening for receiving the ion beam from the first electrode;
- and
- a second central section connected with the second end, wherein the second central section includes a second plurality of loops extending helically about the central axis, and wherein each of the second plurality of loops has a second flattened surface.
A resonator of an ion implanter, the resonator comprising:
- a housing defining an internal cavity;
- a first hollow coil partially disposed within the internal cavity, the first hollow coil comprising:
- a first end extending outside the housing and coupled to a first electrode, the first electrode including a first opening for receiving an ion beam;
- and
- a first central section connected with the first end, wherein the first central section includes a first plurality of loops extending helically about a central axis, wherein each of the first plurality of loops has a first flattened surface;
- and
- a second hollow coil adjacent the first hollow coil within the internal cavity, the second hollow coil comprising:
- a second end extending outside the housing and coupled to a second electrode, the second electrode including a second opening for receiving the ion beam from the first electrode;
- and
- a second central section connected with the second end, wherein the second central section includes a second plurality of loops extending helically about the central axis, and wherein each of the second plurality of loops has a second flattened surface,
- wherein the first plurality of loops includes a first axial end opposite a second axial end, wherein the second plurality of loops includes a third axial end opposite a fourth axial end, wherein one of the first flattened surfaces of the first plurality of loops defines a first plane, wherein another one of the first flattened surfaces of the first plurality of loops defines a second plane, and wherein a first angle, with respect to the central axis, of the first plane is different than a second angle of the second plane.
Dependencies are inferred from the claim text.