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US 11,092,910 B2Granted
Semiconductor light-emitting device, exposure head, and image forming apparatus
AssigneeCanon Kabushiki Kaisha
InventorsYusuke Kamata, Koichiro Nakanishi
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Abstract
A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.
Claims20
A semiconductor light-emitting device comprising:
- a semiconductor stacked structure in which a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type opposite to the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type are stacked in this order, the semiconductor stacked structure including a light-emitting layer;
- a metal electrode provided over the semiconductor stacked structure;
- and
- a transparent electrode provided over the semiconductor stacked structure and over the metal electrode,
- wherein the fourth semiconductor layer includes a first layer having a first impurity concentration and a second layer as a contact layer having a second impurity concentration higher than the first impurity concentration, and
- wherein the metal electrode is provided so as to surround a circumference of the second layer in a plan view.
3 more elements
Dependencies are inferred from the claim text.