Semiconductor structure having a repaired dielectric layer
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, SMIC New Technology Research and Development (Shanghai) Corporation
InventorYong Li
Life of this patent
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a base substrate; and a first doped epitaxial layer and a second doped epitaxial layer in the base substrate. Each of the first and second doped epitaxial layers is corresponding to a different gate structure on the base substrate. The semiconductor structure further includes a repaired dielectric layer formed on and surrounding each of the first and second doped epitaxial layer; a metal layer on the repaired dielectric layer; an interlayer dielectric layer over the base substrate and covering tops of gate structures; and a conductive plug on the metal layer and through the interlayer dielectric layer.
Claims11
A semiconductor structure, comprising:
- a base substrate, wherein the base substrate includes a substrate and a plurality of discrete fins on the substrate;
- a first doped epitaxial layer and a second doped epitaxial layer on the plurality of discrete fins, the first doped epitaxial layer and the second doped epitaxial layers corresponding to different gate structures on the base substrate;
- an interlayer dielectric layer over the base substrate and covering tops of the different gate structures, wherein the interlayer dielectric layer has a contact opening exposing surfaces of the first and second doped epitaxial layers;
- a repaired dielectric layer formed on the exposed surfaces of the first doped epitaxial layer and the second doped epitaxial layer;
- a metal layer formed on the repaired dielectric layer;
- and
- a conductive plug on the metal layer and filling the contact opening in the interlayer dielectric layer.
Dependencies are inferred from the claim text.