NVM synaptic element with gradual reset capability

An analog Magnetoresistive Random Access Memory (MRAM), comprising:

• a plurality of MRAM cells, each of the cells comprising
• a magnetic free layer having a first domain having a first magnetization direction, a second domain having a second magnetization direction opposite to the first magnetization direction and a domain wall located between the first domain and the second domain;
• a magnetically pinned layer;
• an insulating tunnel barrier between the magnetic free layer and the magnetically pinned layer;
• and
• an electrode located adjacent to the magnetic free layer configured to generate heat by supplying current to decrease a conductance of the magnetic free layer.

A method for resetting an analog Magnetoresistive Random Access Memory (MRAM) having a plurality of MRAM cells, comprising:

• detecting a status of a magnetic free layer of each of the plurality of MRAM cells, the magnetic free layer having a first domain having a first magnetization direction, a second domain having a second magnetization direction opposite to the first magnetization direction and a domain wall located between the first domain and the second domain, wherein a detection status is based on the first and second magnetization directions being aligned and the domain wall being removed;
• selecting one or more of the plurality of MRAM cells for a RESET operation, responsive to the first and second magnetization directions being aligned and the domain wall being removed;
• and
• supplying current to an electrode of the selected one or more of the plurality of MRAM cells to generate heat to randomize the magnetization of the cell and applying a magnetic torque to at least a heated part of magnetic free layer to reverse the magnetization directions of the heated part and form the domain wall.