Solid-state imaging device with pixels having an in-pixel capacitance
AssigneeSony Semiconductor Solutions Corporation
InventorsMasaaki Takizawa, Yorito Sakano
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.
Claims20
A solid-state imaging device comprising:
- a pixel array portion in which a plurality of pixels is two-dimensionally arranged,
- wherein the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, wherein the in-pixel capacitance is provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, wherein the counter electrode is provided in the semiconductor substrate, and wherein an overflow path is provided between the photoelectric conversion element and the in-pixel capacitance in a depth direction in the semiconductor substrate such that the overflow path is adjacent to the counter electrode provided in the semiconductor substrate.
A solid-state imaging device comprising:
- a pixel array portion in which a plurality of pixels is two-dimensionally arranged,
- wherein the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, wherein the in-pixel capacitance is provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, wherein the counter electrode is provided in the semiconductor substrate, and wherein an overflow path is directly provided between the photoelectric conversion element and the counter electrode in a depth direction in the semiconductor substrate.
A solid-state imaging device comprising:
- a pixel array portion in which a plurality of pixels is two-dimensionally arranged,
- wherein the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, wherein the in-pixel capacitance is provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, wherein the counter electrode is provided in the semiconductor substrate, and wherein the in-pixel capacitance accumulates a charge that has overflowed from the photoelectric conversion element.
A solid-state imaging device comprising:
- a pixel array portion in which a plurality of pixels is two-dimensionally arranged,
- wherein the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, wherein the in-pixel capacitance is provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, wherein the counter electrode is provided in the semiconductor substrate, and wherein the counter electrode absorbs a charge that has overflowed from the photoelectric conversion element.
Dependencies are inferred from the claim text.