Multi-layer raised frame in bulk acoustic wave device
AssigneeSkyworks Global Pte. Ltd.
InventorsKwang Jae Shin, Jiansong Liu
Life of this patent
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Abstract
Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.
Claims22
A bulk acoustic wave device comprising:
- a first electrode;
- a second electrode;
- a piezoelectric layer positioned between the first electrode and the second electrode;
- and
- a multi-layer raised frame structure outside of a middle area of an active region of the bulk acoustic wave device, the multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between the first electrode and the second electrode, the first raised frame layer having a lower acoustic impedance than the first electrode, the first raised frame layer being configured to move a frequency of a raised frame mode away from a main resonant frequency of the bulk acoustic wave device, and the second raised frame layer overlapping with the first raised frame layer in the active region.
A packaged module comprising:
- a packaging substrate;
- an acoustic wave filter on the packaging substrate and configured to filter a radio frequency signal, the acoustic wave filter including a bulk acoustic wave device, the bulk acoustic wave device including a multi-layer raised frame structure outside of a middle area of an active region of the bulk acoustic wave device, the multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between an electrode and a piezoelectric layer, the first raised frame layer having a lower acoustic impedance than the electrode, the first raised frame layer being configured to move a frequency of a raised frame mode away from a main resonant frequency of the bulk acoustic wave device, and the second raised frame layer overlapping with the first raised frame layer in the active region;
- and
- a radio frequency component electrically coupled to the acoustic wave filter and positioned on the packaging substrate, the acoustic wave filter and the radio frequency component being enclosed within a common package.
A bulk acoustic wave device comprising:
- a first electrode;
- a second electrode;
- a piezoelectric layer positioned between the first electrode and the second electrode;
- and
- a multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between the first electrode and the second electrode, the first raised frame layer having a lower acoustic impedance than the second raised frame layer, the first raised frame layer being configured to move a frequency of a raised frame mode away from a main resonant frequency of the bulk acoustic wave device, and the second raised frame layer overlapping with the first raised frame layer.
Dependencies are inferred from the claim text.