Light emitting element and method of manufacturing the same

A method of manufacturing a light emitting element comprising, sequentially:

• (a) forming a convexity formed from a material different from a material that configures a first compound semiconductor layer on a substrate for manufacturing a light emitting element;
• (b) forming a layered structure body by layering the first compound semiconductor layer formed from a GaN-based compound semiconductor formed from lateral direction growth, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the convexity;
• (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;
• (d) fixing the second light reflecting layer to a support substrate;
• (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the convexity;
• and
• (f) removing the convexity, forming a first light reflecting layer formed from a multilayer film on at least a part of the first surface on the first compound semiconductor layer from which the convexity is removed, and forming a first electrode on at least a part of the first surface of the first compound semiconductor layer on which the first electrode is to be formed.

A light emitting element comprising:

• (A) a layered structure body formed by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor formed by epitaxial growth in a lateral direction, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer;
• (B) a first electrode and a first light reflecting layer;
• and
• (C) a second electrode and a second light reflecting layer formed from a multilayer film formed on the second surface of the second compound semiconductor layer,
• wherein a concavity with a forward tapered side surface is formed on the first surface of the first compound semiconductor layer,
• the first light reflecting layer is formed on at least the concavity, and
• the first electrode is formed on at least the first surface of the first compound semiconductor layer.