Back to results
US 11,081,861 B2Granted
Increase VCSEL power using multiple gain layers
OwnerMieng Paiinventor
Life of this patent
Estimating the term…
Abstract
This invention opens up the chip thickness for increasing VCSEL power. It describes a method by using multiple gain layers 10, separated by insulating layers 11, powered in parallel electrically through embedded electrodes 13, 14 connected through via holes. The gain layers, as a whole, are bounded on top and bottom by DBR mirrors 12. The structure, compared to a standard VCSEL, leads to higher power, lower resistive loss, higher device speed, higher beam quality, and fewer number of DBR layers.
Claims6
A laser system configured to generate first light at an operational wavelength, the laser system comprising:
- an optical cavity having an optical axis;
- multiple individual light amplifying medium (LAM) disposed coaxially with said optical axis inside the optical cavity,
- wherein said multiple LAM are separated from one another by an insulating layer,
- wherein the LAM are bounded on top and bottom by DBR mirrors,
- wherein each of the LAM has a corresponding gain region;
- wherein each of the LAM gain region is excited by two electrodes,
- wherein the electrodes are connected in parallel.
4 more elements
Dependencies are inferred from the claim text.