Integrated antenna using through silicon vias
AssigneeMicron Technology, Inc.
InventorOwen R. Fay
Life of this patent
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Abstract
Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least a portion of the plurality of TSVs, and at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion. The plurality of TSVs with metallic conductors located within are configured to form an antenna structure. Selectively breakable connective circuitry is used to form and/or tune the antenna structure.
Claims20
A semiconductor device assembly comprising:
- a front side metallurgy portion;
- a substrate layer adjacent to the front side metallurgy portion;
- a plurality of through-silicon-vias (TSVs) in the substrate layer;
- metallic conductors located within at least a portion of the plurality of TSVs;
- at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion, wherein the at least one conductive connection is between a first portion of the metallic conductors and a first portion of the front side metallurgy portion and the semiconductor device assembly further comprises:
- a second conductive connection between a second portion of the metallic conductors and a second portion of the front side metallurgy portion;
- and
- wherein the portion of the plurality of TSVs with metallic conductors located within are configured to form an antenna structure.
A method of making a semiconductor device assembly comprising:
- providing a front side metallurgy portion;
- providing a substrate layer adjacent to the front side metallurgy portion;
- providing a plurality of through-silicon-vias (TSVs) in the substrate layer;
- providing metallic conductors located within at least a portion of the plurality of TSVs;
- providing at least one conductive connection between the metallic conductors and the front side metallurgy portion;
- connecting a first portion of the metallic conductors and a first portion of the front side metallurgy portion to form the at least one conductive connection;
- providing a second conductive connection between a second portion of the metallic conductors and a second portion of the front side metallurgy portion;
- and
- configuring the portion of the plurality of TSVs with metallic conductors located within to form an antenna structure.
Dependencies are inferred from the claim text.