Fabricating an RF filter on a semiconductor package using selective seeding
AssigneeIntel Corporation
InventorsBrandon C. Marin, Jeremy D. Ecton, Aleksandar Aleksov, Kristof Darmawikarta, Yonggang Li, Dilan Seneviratne
Life of this patent
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Abstract
A filter structure comprises a first dielectric buildup film. A second dielectric buildup film is over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst. A trench is in the second dielectric buildup film. A metal is selectively plated to sidewalls of the trench based at least in part on the metallization catalyst. A low-loss buildup film is over the metal that substantially fills the trench.
Claims21
A filter structure, comprising:
- a first dielectric buildup film;
- a second dielectric buildup film over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric;
- a trench in the second dielectric buildup film;
- a metal selectively plated to sidewalls of the trench based at least in part on the metallization catalyst;
- and
- a low-loss buildup film over the metal that substantially fills the trench.
A filter structure, comprising:
- a first dielectric buildup film;
- a second dielectric buildup film over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst;
- a trench in the second dielectric buildup film, wherein the trench further comprises a plurality of fins located along opposing sidewalls of the trench, wherein the metal is plated to sidewalls of the fins to form metal plated cavities between laterally adjacent ones of the fins;
- a metal selectively plated to sidewalls of the trench based at least in part on the metallization catalyst;
- and
- a low-loss buildup film over the metal that substantially fills the trench.
An RF filter structure, comprising:
- a first dielectric buildup film;
- a metal pad on the first dielectric buildup film;
- a second dielectric buildup film laminated to the metal pad, the second dielectric buildup film including a metallization catalyst;
- a trench in the second dielectric buildup film down to the metal pad, wherein the trench includes a plurality of laterally spaced fins on two opposing trench sidewalls, where pairs of the fins on the opposing trench sidewalls have variably sized gaps therebetween;
- a metal selectively plated to the trench sidewalls and sidewalls of the fins based at least in part on activation of the metallization catalyst at an interface between the second dielectric buildup film and the sidewalls of the trench and fins;
- and
- a low-loss buildup film over the metal that substantially fills the trench.
A filter structure, comprising:
- a first dielectric buildup film;
- a second dielectric buildup film over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst;
- a trench in the second dielectric buildup film;
- a plurality of fins recessed within the trench such that the plurality of fins have a height below that of sidewalls of the trench;
- a metal selectively plated to sidewalls of the trench based at least in part on the metallization catalyst;
- and
- a low-loss buildup film over the metal that substantially fills the trench.
Dependencies are inferred from the claim text.