Magnetic random access memory bottom electrode self-aligned to underlying interconnect structures
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
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Abstract
Embodiments of the invention are directed to a method of forming a bottom electrode of a magnetic tunnel junction (MTJ) storage element. A non-limiting example of the method includes forming the bottom electrode of the MTJ storage element such that the bottom electrode is communicatively coupled to an interconnect structure through an in-situ interface, wherein the in-situ interface includes an interface between a bottom surface of the bottom electrode and a top surface of the interconnect structure. A top surface of the bottom electrode is configured to couple to a bottom end of a MTJ stack, and the bottom electrode includes a semiconductor and metal alloy.
Claims20
A method of forming a bottom electrode of a magnetic tunnel junction (MTJ) storage element, the method comprising:
- forming the bottom electrode of the MTJ storage element such that the bottom electrode is communicatively coupled to an interconnect structure through an in-situ interface;
- wherein the in-situ interface comprises an interface between a bottom surface of the bottom electrode and a top surface of the interconnect structure;
- wherein a top surface of the bottom electrode is configured to couple to a bottom end of a MTJ stack;
- and
- wherein the bottom electrode comprises an alloy comprising a semiconductor and a metal.
A method of forming a bottom electrode of a magnetic tunnel junction (MTJ) storage element, the method comprising:
- depositing a layer of semiconductor material over an exposed surface of a layer of a multi-layered integrated circuit (IC) and an exposed surface of an interconnect structure in the layer of the multi-layered IC;
- wherein the interconnect structure comprises an interconnect structure metal;
- and
- forming the bottom electrode of the MTJ storage element by initiating a self-aligned chemical reaction between the interconnect structure metal and a portion of the layer of semiconductor material that is over the exposed surface of the interconnect structure;
- wherein a top surface of the bottom electrode is configured to couple to a bottom end of a MTJ stack;
- and
- wherein the bottom electrode comprises an alloy comprising a semiconductor and a metal.
A bottom electrode structure of a magnetic tunnel junction (MTJ) storage element, the bottom electrode structure comprising:
- a bottom electrode communicatively coupled to an interconnect structure through an in-situ interface;
- wherein the in-situ interface comprises an interface between a bottom surface of the bottom electrode and a top surface of the interconnect structure;
- wherein the bottom surface of the bottom electrode and the top surface of the interconnect structure that form the in-situ interface have not been exposed to an ambient environment;
- wherein a top surface of the bottom electrode is configured to couple to a bottom end of a MTJ stack;
- and
- wherein the bottom electrode comprises an alloy comprising a semiconductor and a metal.
Dependencies are inferred from the claim text.