Buried activated p-(Al,In)GaN layers
AssigneeGallium Enterprises Pty Ltd
InventorsIan Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Abstract
Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.
Claims21
A method of fabricating a semiconductor structure comprising a buried activated p-(Al,In)GaN layer, comprising:
- (a) exposing a magnesium-doped p-(Al,In)GaN layer to a gaseous mixture comprising H2, NH3, or a combination thereof, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr, to provide an exposed magnesium-doped p-(Al,In)GaN layer;
- and
- (b) growing an n-(Al,In)GaN layer on the exposed magnesium-doped p-(Al,In)GaN layer by RPCVD,
- to provide a semiconductor structure comprising a buried activated p-(Al,In)GaN layer.
A method of fabricating a semiconductor structure comprising a buried activated p-(Al,In)GaN layer, comprising:
- (a) growing a magnesium-doped p-(Al,In)GaN layer using a gaseous mixture comprising H2, NH3, or a combination thereof, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr;
- and
- (b) growing an n-(Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer by RPCVD, wherein growing the n-(Al,In)GaN layer consists of growing an n-(Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer by RPCVD in an environment wherein the partial pressure of N2 is greater than the partial pressure of H2,
- to provide a semiconductor structure comprising a buried activated magnesium doped p-(Al,In)GaN layer.
A method of fabricating a semiconductor structure comprising a buried activated p-(Al,In)GaN layer, comprising:
- (a) growing a magnesium-doped p-(Al,In)GaN layer using a gaseous mixture comprising H2, NH3, or a combination thereof, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr;
- and
- (b) growing an n-(Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer by RPCVD, wherein growing the n-(Al,In)GaN layer consists of growing an n-(Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer by RPCVD in an environment wherein the partial pressure of H2 is greater than the partial pressure of N2,
- to provide a semiconductor structure comprising a buried activated magnesium doped p-(Al,In)GaN layer.
A method of fabricating a semiconductor structure comprising a buried activated p-(Al,In)GaN layer, comprising:
- (a) growing a magnesium-doped p-(Al,In)GaN layer using a gaseous mixture comprising H2, NH3, or a combination thereof, wherein the gaseous mixture has a partial pressure of H2 less than 760 Torr;
- and
- (b) growing an n-(Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer by RPCVD, wherein step (b) comprises:
- (b1) growing an (Al,In)GaN layer on the magnesium-doped p-(Al,In)GaN layer in an environment wherein the partial pressure of N2 is greater than the partial pressure of H2;
- and
- (b2) growing the n-(Al,In)GaN layer on the (Al,In)GaN layer by RPCVD,
- to provide a semiconductor structure comprising a buried activated magnesium doped p-(Al,In)GaN layer.
Dependencies are inferred from the claim text.