Integrated sensor of ionizing radiation and ionizing particles

A semiconductor sensor of ionizing radiation and/or particles, comprising:

• a substrate of a semiconductor material having a first doping;
• a bias layer formed upon a backside of said substrate, having a second doping of a type opposite to a type of said first doping;
• a backside bias electrode, formed on a free surface of said bias layer opposite to a surface of said bias layer in contact with said substrate;
• an intermediate layer formed upon a front side of said substrate, having a third doping greater than said first doping and of the same type thereof;
• first doped buried regions formed in depth in said intermediate layer, separated one from the other by spacing portions of said intermediate layer, said doped buried regions having a fourth doping of a type opposite to the type of said first doping;
• carrier collection regions formed in a front side of said spacing portions of the intermediate layer, fully surrounded therefrom and at a distance from said doped buried regions, said collection regions having a fifth doping greater than said third doping and of a same type thereof, and being extended in depth in said intermediate layer not more than said doped buried regions;
• collection electrodes, each formed upon a front side of a respective region of said carrier collection regions;
• first doped superficial regions formed upon said first doped buried regions up to a front-side of said intermediate layer;
• and
• readout electronic circuits defined in a front side of said first doped superficial regions, having electric terminals functionally connected with said collection electrodes to detect carriers, generated by ionizing radiation and/or particles into said substrate, collected by said collection regions.