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US 11,081,609 B2Granted
Solar cell structure and composition and method for forming the same
AssigneeThe Boeing Company
InventorsAndreea Boca, Daniel C. Law, Joseph Charles Boisvert, Nasser H. Karam
Life of this patent
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Abstract
A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.
Claims20
A semiconductor structure comprising:
- a first semiconductor wafer layer including at least one top subcell, wherein said at least one top subcell includes one or more of the following:
- a gallium arsenide (GaAs) subcell, an aluminum gallium indium arsenic (AlGaInAs) subcell, and a gallium indium phosphide (GaInP) subcell;
- a second semiconductor wafer including a bottom substrate and at least one bottom subcell, wherein said at least one bottom subcell has been epitaxially grown from said bottom substrate, and wherein said at least one bottom subcell includes at least one of said following:
- gallium indium phosphide arsenic (GaInPAs) subcell and a gallium indium arsenic (GaInAs) subcell;
- and
- a bonding layer connecting said first semiconductor wafer layer to said second semiconductor wafer layer, said bonding layer comprising an electrically conductive carbonaceous component and a binder component that provides bonding capability to connect said first semiconductor wafer layer to said second semiconductor wafer layer, said electrically conductive carbonaceous component comprising single-walled carbon nanotubes having a length of at least one micron, wherein said carbon nanotubes are in bundles that define void spaces between said carbon nanotubes, said carbon nanotubes rendering said bonding layer electrically conductive and said binder component of said bonding layer infiltrating said void spaces defined by said carbon nanotubes to form a film.
3 more elements
A solar cell structure comprising:
- a first semiconductor wafer layer including a top substrate and at least one top subcell, wherein said at least at least one top subcell has been epitaxially grown from said top substrate, and wherein said at least one top subcell includes one or more of the following:
- a gallium arsenide (GaAs) subcell, an aluminum gallium indium arsenic (AlGaInAs) subcell, and a gallium indium phosphide (GaInP) subcell;
- a second semiconductor wafer including a bottom substrate and at least one bottom subcell, wherein said at least at least one bottom subcell has been epitaxially grown from said bottom substrate, and wherein said at least one bottom subcell includes at least one of said following:
- gallium indium phosphide arsenic (GaInPAs) subcell and a gallium indium arsenic (GaInAs) subcell;
- and
- a bonding layer connecting said first semiconductor wafer layer to said second semiconductor wafer layer, said bonding layer comprising single-walled carbon nanotubes having a length of at least one micron and a binder component, wherein said bottom subcell operates in a spectral range, and wherein said bonding layer has an optical transmission of at least 85 percent throughout said spectral range, and wherein said binder component provides bonding capability to connect said first semiconductor wafer layer to said second semiconductor wafer layer, and the carbon nanotubes are in bundles that define void spaces between said carbon nanotubes, said carbon nanotubes rendering said bonding layer electrically conductive and said binder component of said bonding layer infiltrating said void spaces defined by said carbon nanotubes to form a film.
3 more elements
Dependencies are inferred from the claim text.