Optical semiconductor device
AssigneeMitsubishi Electric Corporation
InventorKoichi Fujita
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Abstract
An optical semiconductor device of the invention includes: a semiconductor substrate; an optical communication unit that is provided on the semiconductor substrate, as a light receiving unit for receiving an optical signal or a light emitting unit for emitting an optical signal; an interlayer film that covers the semiconductor substrate and the optical communication unit; a Fresnel lens through which the optical signal passes, that is provided on a planarized surface of the interlayer film placed on its side farther from the semiconductor substrate; and a protective film that covers the Fresnel lens and the interlayer film, whose refractive index is larger than that of the interlayer film, and whose surface placed on its side farther from the interlayer film is planarized.
Claims11
An optical semiconductor device which comprises a first light transceiver provided with a first semiconductor substrate and a second light transceiver provided with a second semiconductor substrate, and in which optical signal communication is established mutually between these transceivers,
- said first light transceiver comprising:
- the first semiconductor substrate;
- a light receiving unit for receiving an optical signal and a light emitting unit for emitting the optical signal, that are provided on the first semiconductor substrate;
- a first interlayer film that covers the first semiconductor substrate, the light receiving unit and the light emitting unit;
- Fresnel lenses through which the optical signals pass, that are provided respectively for the light receiving unit and the light emitting unit, and provided on a planarized surface of the first interlayer film placed on its side farther from the first semiconductor substrate;
- and
- a first protective film that covers the Fresnel lenses and the first interlayer film, whose refractive index is larger than that of the first interlayer film, and whose surface placed on its side farther from the first interlayer film is planarized;
- and
- said second light transceiver comprising:
- the second semiconductor substrate;
- a light receiving unit for receiving an optical signal and a light emitting unit for emitting the optical signal, that are provided on the second semiconductor substrate;
- a second interlayer film that covers the second semiconductor substrate, the light receiving unit and the light emitting unit;
- Fresnel lenses through which the optical signals pass, that are provided respectively for the light receiving unit and the light emitting unit, and provided on a planarized surface of the second interlayer film placed on its side farther from the second semiconductor substrate;
- and
- a second protective film that covers the Fresnel lenses and the second interlayer film, whose refractive index is larger than that of the second interlayer film, and whose surface placed on its side farther from the second interlayer film is planarized;
- wherein the light receiving unit in the first light transceiver and the light emitting unit in the second light transceiver are placed so as to face each other, and the light emitting unit in the first light transceiver and the light receiving unit in the second light transceiver are placed so as to face each other;
- and
- wherein the first protective film in the first light transceiver and the second protective film in the second light transceiver are bonded together directly or through a third interlayer film.
An optical semiconductor device, comprising:
- a light transmitter for emitting concurrently or in a time-division manner, optical signals that includes multiple wavelengths, respectively;
- and a light receiver that is placed so as to face the light transmitter, for receiving the optical signals from the light transmitter according to their respective wavelengths;
- wherein the light transmitter comprises:
- a first semiconductor substrate;
- a light emitting unit provided on the first semiconductor substrate, for emitting the optical signals;
- a first interlayer film that covers the first semiconductor substrate and the light emitting unit;
- a one-sided Fresnel lens through which the optical signals pass, that is formed on a planarized surface of the first interlayer film placed on its side farther from the first semiconductor substrate;
- and
- a first protective film that covers the one-sided Fresnel lens and the first interlayer film, whose refractive index is larger than that of the first interlayer film, and whose surface placed on its side farther from the first interlayer film is planarized;
- and
- wherein the light receiver comprises:
- a second semiconductor substrate;
- a plurality of light receiving units that are provided on the second semiconductor substrate, for receiving the optical signals whose refracted angles were differently set according to their respective wavelengths by the one-sided Fresnel lens of the light transmitter;
- and
- a second interlayer film that covers the second semiconductor substrate and the plurality of light receiving units;
- and
- wherein the first protective film in the light transmitter and the second interlayer film in the light receiver are bonded together directly or through a third interlayer film.
Dependencies are inferred from the claim text.