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US 11,081,596 B2Granted
Semiconductor device and manufacturing device of the same
AssigneeRenesas Electronics Corporation
InventorsMasaru Kadoshima, Masao Inoue
Life of this patent
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Abstract
To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate. The insulating film portion includes an insulating film containing silicon and oxygen, a first charge storage film containing silicon and nitrogen, an insulating film containing silicon and oxygen, a second charge storage film containing silicon and nitrogen, and an insulating film containing silicon and oxygen. The first charge storage film is included by two charge storage films.
Claims13
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming an insulating film portion over a principal surface of a semiconductor substrate;
- (b) forming a conductive film over the insulating film portion;
- and
- (c) patterning the conductive film and the insulating film portion to form 1) a gate electrode included by the conductive film and 2) a gate insulating film included by the insulating film portion between the gate electrode and the semiconductor substrate, wherein the step (a) includes the steps of
- (a1) forming a first insulating film containing silicon and oxygen over the principal surface of the semiconductor substrate,
- (a2) forming a second insulating film containing silicon and nitrogen over the first insulating film (a3) forming a third insulating film containing silicon and oxygen over the second insulating film,
- (a4) forming a fourth insulating film containing silicon and nitrogen over the third insulating film, and
- (a5) forming a fifth insulating film containing silicon and oxygen over the fourth insulating film,
- wherein the fourth insulating film is thicker than the second insulating film, and
- wherein the third insulating film is thinner than the second insulating film.
7 more elements
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming an insulating film portion over a principal surface of a semiconductor substrate;
- (b) forming a conductive film over the insulating film portion;
- and
- (c) patterning the conductive film and the insulating film portion to form a gate electrode included by the conductive film and a gate insulating film included by the insulating film portion between the gate electrode and the semiconductor substrate,
- wherein the step (a) includes the steps of
- (a1) forming a first insulating film containing silicon and oxygen over the principal surface of the semiconductor substrate, and
- (a2) forming a second insulating film containing silicon and nitrogen over the first insulating film by forming an underlying film on the first insulating film and an upper insulating film on the underlying insulating film, wherein the step comprises:
- (a21) forming an underlying insulating film on the first insulating film;
- and
- (a22) forming an upper insulating film on the underlying insulating film, wherein the upper insulating film of the second insulating film is thinner than the underlying insulating film of the second insulating film,
- (a3) forming a third insulating film containing silicon and oxygen over the second insulating film,
- (a4) forming a fourth insulating film containing silicon and nitrogen over the third insulating film, and
- (a5) forming a fifth insulating film containing silicon and oxygen over the fourth insulating film,
- wherein the fourth insulating film is thicker than the second insulating film,
- wherein the step (a3) comprises oxidizing a portion of the upper insulating film to form the third insulating film containing silicon and oxygen over a remaining portion of the upper insulating film,
- wherein the oxidizing comprises processing a top surface of the upper insulating film using a processing liquid containing pure water to form the third insulating film,
- wherein a forming temperature of the upper insulating film is lower than a forming temperature of the underlying insulating film,
- wherein the forming temperature of the upper insulating film is a at temperature within a range of 400° C. to 500° C. and
- wherein the forming temperature of the underlying insulating film is at a temperature 1) within a range of 500° C. to 600° C. and 2) higher than the forming temperature of the upper insulating film by 25° C. or more.
16 more elements
Dependencies are inferred from the claim text.