Multi-gate transistor and memory device using the same
AssigneeMacronix International Co., Ltd.
InventorsCheng-Lin Sung, Pei-Ying Du, Hang-Ting Lue
Life of this patent
Estimating the term…
Abstract
A multi-gate transistor includes: a doped drain region; a doped source region; a gate group including a first gate and a second gate; a channel, the doped drain region and the doped source region being on respective two sides of the channel; and an interlayer, formed between the channel and the gate group, wherein a first gate voltage and a second gate voltage are applied to the first gate and the second gate of the gate group, respectively, the channel is induced as at least a P sub-channel and at least an N sub-channel and the multi-gate transistor equivalently behaves as a PNPN structure.
Claims9
A multi-gate transistor including:
- a doped drain region;
- a doped source region;
- a gate group including a first gate and a second gate;
- a channel, the doped drain region and the doped source region being on respective two sides of the channel;
- and
- an interlayer, formed between the channel and the gate group,
- wherein a first gate voltage and a second gate voltage are applied to the first gate and the second gate of the gate group, respectively, the channel is induced as at least a P sub-channel and at least an N sub-channel and the multi-gate transistor equivalently behaves as a PNPN structure.
A multi-gate transistor including:
- a doped drain region;
- a doped source region;
- a gate group including a first gate and a second gate;
- a doped channel, the doped drain region and the doped source region being on respective two sides of the doped channel;
- and
- an interlayer, formed between the doped channel and the gate group,
- wherein a first gate voltage and a second gate voltage are applied to the first gate and the second gate of the gate group to enhance channel sensing of the doped channel and the multi-gate transistor equivalently behaves as a PNPN structure.
Dependencies are inferred from the claim text.