Thin film transistor and display panel using the same
AssigneeLG Display Co., Ltd.
InventorsSunyoung Choi, Kummi Oh
Life of this patent
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Abstract
In a display panel according to the disclosure, the display panel includes a substrate, an active layer having a source region, a drain region and a channel region on the substrate, a source electrode contacted with the source region, a drain electrode contacted with the drain region, an upper gate electrode above the active layer, and a lower gate electrode below the active layer. An edge of the lower gate electrode closest to the drain region overlaps with the channel region, and the source region and the drain region do not overlap with the upper gate electrode. The driving element constituting the display panel can generate a high driving current without deteriorating the characteristics thereof, thereby stably maintaining the luminance of the display panel.
Claims12
A display panel comprising:
- an active layer including a source region, a drain region, and a channel on a substrate;
- a source electrode and a drain electrode connected to the source region and the drain region, respectively;
- an upper gate electrode above the active layer;
- a lower gate electrode below the active layer;
- a first insulating layer between the lower gate electrode and the active layer;
- and
- a second insulating layer between the active layer and the upper gate electrode,
- wherein an edge of the lower gate electrode closest to the drain region overlaps the channel region,
- wherein the source region and the drain region do not overlap with the upper gate electrode, and
- wherein the source electrode and the drain electrode pass through the second insulating layer and the active layer, and are contacted with the first insulating layer.
A thin film transistor comprising:
- an active layer including a source region, a drain region and a channel region;
- an upper gate electrode above the active layer;
- and
- a lower gate electrode below the active layer,
- wherein a length of the lower gate electrode is shorter than a length of the upper gate electrode, and the source region and the drain region do not overlap with the upper gate electrode, and
- wherein the length of the lower gate electrode is equal to or larger than a half of the length of the upper gate electrode.
Dependencies are inferred from the claim text.