Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material
AssigneesSamsung Electronics Co., Ltd., Board of Regents, The University of Texas System
InventorsWei-E Wang, Mark S. Rodder, Robert M. Wallace, Xiaoye Qin
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Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.
Claims8
A metal oxide semiconductor field effect transistor (MOSFET) comprising:
- a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that comprises three elements thereon, the epitaxial III-V material including InxGa1-xAs, with x being in a range of about 0.2 to about 0.8;
- a source electrode over the source region;
- a drain electrode over the drain region;
- and
- a crystalline oxide layer comprising an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material comprising the three elements, the crystalline oxide layer being free of Ga2O3 (Ga3+).
Dependencies are inferred from the claim text.