Thin film transistor and method for manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsHimchan Oh, Sun Jin Yun, Jeong Ik Lee, Chi-Sun Hwang
Life of this patent
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Abstract
Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.
Claims11
A thin film transistor comprising:
- a substrate;
- a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate;
- source/drain electrodes connected to both ends of the channel part in the first direction;
- and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction, the second direction being parallel to the upper surface of the substrate;
- wherein each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer;
- wherein the gate electrode contacts the upper surface of the substrate, and wherein a base of the channel part is sandwiched by a pair of recesses in the upper surface of the substrate.
A thin film transistor comprising:
- a substrate;
- a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate;
- source/drain electrodes connected to both ends of the channel part in the first direction;
- and
- a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate;
- wherein each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer;
- wherein the channel part, the source/drain electrodes, and the gate electrode are composed of a same material.
Dependencies are inferred from the claim text.