Method of manufacturing semiconductor devices using a capping layer in forming gate electrode and semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChandrashekhar Prakash Savant, Kin Shun Chong, Tien-Wei Yu, Chia-Ming Tsai, Ming-Te Chen
Life of this patent
Estimating the term…
Abstract
In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a shield layer is formed over the first conductive layer forming a bilayer structure, a capping layer is formed over the shield layer, a first annealing operation is performed after the capping layer is formed, the capping layer is removed after the first annealing operation, and a gate electrode layer is formed after the capping layer is removed.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming an interfacial layer over a channel region;
- forming a gate dielectric layer over the interfacial layer;
- forming a first conductive layer over the gate dielectric layer;
- forming a shield layer over the first conductive layer;
- forming a capping layer over the shield layer;
- performing a first annealing operation after the capping layer is formed;
- removing the capping layer after the first annealing operation;
- and
- forming a gate electrode layer over the gate dielectric layer after the capping layer is removed.
A method of manufacturing a semiconductor device, comprising:
- forming a gate dielectric layer over a channel region;
- forming a first conductive layer over the gate dielectric layer;
- forming a shield layer over the first conductive layer;
- performing a first annealing operation after the shield layer is formed;
- performing a fluorine soaking operation;
- forming a capping layer over the shield layer;
- performing a second annealing operation after the capping layer is formed;
- removing the capping layer after the second annealing operation;
- and
- forming a gate electrode layer over the gate dielectric layer after the capping layer is removed,
- wherein the shield layer is removed after first annealing operation.
A method of manufacturing a semiconductor device, comprising:
- forming a gate dielectric layer over a channel region;
- forming a first conductive layer over the gate dielectric layer;
- forming a shield layer over the first conductive layer;
- performing a first annealing operation after the shield layer is formed;
- forming a capping layer over the shield layer;
- performing a second annealing operation after the capping layer is formed;
- removing the capping layer after the second annealing operation;
- and
- forming a gate electrode layer after the capping layer is removed,
- wherein the shield layer is removed between the first annealing operation and the second annealing operation, or after the second annealing operation.
Dependencies are inferred from the claim text.