High electron mobility transistor and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChun-Ming Chang, Chih-Tung Yeh
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Abstract
An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covers the second III-V compound layer. At least one electrode is disposed on the insulating layer and contacts the insulating layer, wherein a voltage is applied to the electrode.
Claims19
A high electron mobility transistor (HEMT), comprising:
- a first III-V compound layer;
- a second III-V compound layer disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other;
- a source electrode and a drain electrode disposed on the second III-V compound layer;
- a gate electrode disposed on the second III-V compound layer between the source electrode and the drain electrode;
- an insulating layer disposed between the drain electrode and the gate electrode and covering the second III-V compound layer, wherein the insulating layer conformally covers the source electrode, the drain electrode and the gate electrode;
- and
- at least one electrode disposed on the insulating layer and contacting the insulating layer, wherein a voltage is applied to the electrode.
A method of fabricating a high electron mobility transistor (HEMT), comprising:
- providing a first III-V compound layer;
- forming a second III-V compound layer disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other;
- forming a source electrode, a drain electrode and a gate electrode on the second III-V compound layer, wherein the gate electrode is between the source electrode and the drain electrode;
- forming an insulating layer conformally covering and contacting the second III-V compound layer, the drain electrode, the source electrode and the gate electrode;
- and
- after forming the insulating layer, forming at least one electrode on the insulating layer between the drain electron and the gate electrode, the electrode contacting the insulating layer, wherein a voltage is applied to the electrode.
Dependencies are inferred from the claim text.