III-V depletion mode semiconductor device

Abstract

We disclose herein a depletion mode III-nitride semiconductor based heterojunction device, comprising: a substrate; a III-nitride semiconductor region formed over the substrate, wherein the III-nitride semiconductor region comprises a heterojunction comprising at least one two-dimensional carrier gas of second conductivity type; a first terminal operatively connected to the III-nitride semiconductor region; a second terminal laterally spaced from the first terminal in a first dimension and operatively connected to the III-nitride semiconductor region; at least two highly doped semiconductor regions of a first conductivity type formed over the III-nitride semiconductor region, the at least two highly doped semiconductor regions being formed between the first terminal and the second terminal; and a gate terminal formed over the at least two highly doped semiconductor regions; wherein the at least two highly doped semiconductor regions are spaced from each other in a second dimension.

Dependencies are inferred from the claim text.