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US 11,081,577 B2Granted
Electronic device including two-dimensional electron gas and method of fabricating the same
AssigneeIndustry-University Cooperation Foundation Hanyang University Erica Campus
InventorsDaehyun Kim, Taejoo Park, Yuhang Liu
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Abstract
An electronic device including a two-dimensional electron gas is provided. The electronic device includes a substrate, a first material layer disposed on the substrate and formed of a binary oxide, a second material layer disposed on the first material layer and formed of a binary oxide, and a two-dimensional electron gas generated between the first material layer and the second material layer.
Claims11
An electronic device comprising:
- a silicon substrate;
- a silicon oxide layer disposed on the silicon substrate;
- a first material layer disposed on, and in direct contact with, the silicon oxide layer, such that the silicon oxide layer is positioned between the silicon substrate and the first material layer, the first material layer formed of a first binary amorphous metal oxide;
- a second material layer disposed on, and in direct contact with, a surface of the first material layer, the second material layer comprising amorphous aluminum oxide, which is a different material than the first binary amorphous metal oxide, the second material layer disposed such that the amorphous aluminum oxide is separated from the silicon oxide layer by the intervening first material layer;
- a two-dimensional electron gas generated between the first material layer and the second material layer;
- and
- an electrode that is in direct contact with the surface of the first material layer, that penetrates the second material layer, and that contacts the two-dimensional electron gas.
4 more elements
An electronic device comprising:
- a substrate;
- a silicon oxide layer disposed on the substrate;
- a first material layer disposed on, and in direct contact with, the silicon oxide layer, the first material layer formed of a first binary amorphous oxide and having a thickness between 2.5 nm and 5.0 nm;
- a second material layer disposed on, and in direct contact with, a surface of the first material layer, the second material layer formed of a second binary amorphous oxide, wherein the first and second binary amorphous oxides are different materials;
- a two-dimensional electron gas generated between the first material layer and the second material layer;
- and
- an electrode that is in direct contact with the surface of the first material layer, that penetrates the second material layer, and that contacts the two-dimensional electron gas.
4 more elements
Dependencies are inferred from the claim text.