IGBT power device

An insulated gate bipolar transistor (IGBT) power device, comprising:

• a p-type collector region and an n-type collector region arranged at intervals, wherein the p-type collector region and the n-type collector region are connected to a collector voltage;
• an n-type field cut-off region located above the p-type collector region and the n-type collector region, an n-type drift region located above the n-type field cut-off region, at least two p-type body regions arranged in sequence within the n-type drift region, and a first n-type source region, a second n-type source region and a p-type body region contact region which are located within each of the at least two p-type body regions;
• a conductive layer located above the p-type body region contact region, wherein the conductive layer and the p-type body region contact region form a body region contact diode structure, the conductive layer is a cathode of the body region contact diode structure, and the p-type body region contact region is art anode of the body region contact diode structure;
• a first current channel located within each of the at least two p-type body regions and between the first n-type source region and the n-type drift region, and a first gate and a gate dielectric layer covering the first current channel, wherein the first gate is externally connected to a gate voltage;
• and
• a second current channel located within each of the at least two p-type body regions and between the second n-type source region and the n-type drift region, and a second gate, wherein the gate dielectric layer covers the second current channel, the second gate, the first n-type source region, the second n-type source region and the conductive layer are electrically connected to each other, and connected to an emitter voltage.