Semiconductor element
AssigneeMurata Manufacturing Co., Ltd.
InventorsAtsushi Kurokawa, Kazuya Kobayashi
Life of this patent
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Abstract
A semiconductor element includes a semiconductor substrate; a collector layer on the semiconductor substrate; a base layer on the collector layer; an emitter layer on the base layer; emitter wiring electrically coupled to the emitter layer; a top metal layer on the emitter wiring; a first protective film covering the emitter wiring and the top metal layer, the first protective film having a first opening that overlaps at least the collector layer; and a bump including an under-bump metal layer electrically coupled to the emitter wiring via the first opening, the under-bump metal layer being larger than the first opening in plan-view area. The first protective film has an inner edge around the first opening, and the inner edge is on the top metal layer.
Claims20
A semiconductor element comprising:
- a semiconductor substrate;
- a collector layer on the semiconductor substrate;
- a base layer on the collector layer;
- an emitter layer on the base layer;
- emitter wiring electrically coupled to the emitter layer;
- a top metal layer on the emitter wiring;
- a first protective film covering the emitter wiring and the top metal layer, the first protective film having a first opening that overlaps at least the collector layer, the first protective film having an inner edge around the first opening, and the inner edge being on the top metal layer;
- and
- a bump including an under-bump metal layer electrically coupled to the emitter wiring via the first opening, the under-bump metal layer being larger than the first opening in plan-view area.
Dependencies are inferred from the claim text.