Replacement-channel fabrication of III-V nanosheet devices
AssigneeInternational Business Machines Corporation
InventorsJingyun Zhang, Choonghyun Lee, Chun Wing Yeung, Robin Hsin Kuo Chao, Heng Wu
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Abstract
Semiconductor devices and methods of forming the same include forming a stack of alternating first and second sacrificial layers. The first sacrificial layers are recessed relative to the second sacrificial layers. Replacement channel layers are grown from sidewalls of the first sacrificial layers. A first source/drain region is grown from the replacement channel layer. The recessed first sacrificial layers are etched away. A second source/drain region is grown from the replacement channel layer. The second sacrificial layers are etched away. A gate stack is formed between and around the replacement channel layers.
Claims16
A method for forming a semiconductor device, comprising:
- forming a stack of alternating first and second sacrificial layers;
- recessing the first sacrificial layers relative to the second sacrificial layers;
- growing replacement channel layers from sidewalls of the first sacrificial layers;
- growing a first source/drain region from the replacement channel layer;
- etching away the recessed first sacrificial layers;
- growing a second source/drain region from the replacement channel layer;
- etching away the second sacrificial layers;
- and
- forming a gate stack between, around, and in direct contact with the replacement channel layers and in contact with upper and lower surfaces of the replacement channel layers.
A method for forming a semiconductor device, comprising:
- forming a stack of alternating first and second sacrificial layers, wherein top surfaces of the first and second alternating layers have a (111) crystal orientation;
- recessing the first sacrificial layers relative to the second sacrificial layers;
- forming a protective layer on the second sacrificial layers, leaving sidewalls of the first sacrificial layers exposed with a crystal orientation of (110);
- growing replacement channel layers from sidewalls of the first sacrificial layers after forming the protective layer;
- growing a first source/drain region from the replacement channel layer;
- etching away the recessed first sacrificial layers;
- growing a second source/drain region from the replacement channel layer;
- etching away the second sacrificial layers;
- and
- forming a gate stack between, around, and in direct contact with the replacement channel layers and in contact with upper and lower surfaces of the replacement channel layers.
Dependencies are inferred from the claim text.