Semiconductor device and method for manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorNaoyuki Ohse
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Abstract
A semiconductor device includes a first electrode, a silicon carbide substrate having a first surface electrically connected with the first electrode and a second surface opposite to the first surface, an ohmic junction layer disposed on the second surface, and a second electrode disposed on the ohmic junction layer. The ohmic junction layer has a first layer that is directly disposed on the second surface and includes a first silicide of titanium and a first silicide of a metal element other than titanium, and a second layer that is directly disposed on the first layer, includes a second silicide of titanium and a second silicide of the metal element, and has a lower titanium concentration than the first layer.
Claims12
A semiconductor device comprising:
- a first electrode;
- a silicon carbide substrate having a first surface electrically connected with the first electrode, and a second surface opposite to the first surface;
- an ohmic junction layer disposed on the second surface;
- and
- a second electrode disposed on the ohmic junction layer, wherein the ohmic junction layer comprises
- a first layer that is directly disposed on the second surface and includes a first silicide of titanium and a first silicide of a metal element other than titanium, and
- a second layer that is directly disposed on the first layer, includes a second silicide of titanium and a second silicide of the metal element, and has a lower titanium concentration than the first layer.
A method for manufacturing a semiconductor device, comprising steps of:
- providing a substrate structure that includes a first electrode, and a silicon carbide substrate having a first surface electrically connected to the first electrode, and having a second surface opposite to the first surface;
- forming a titanium layer on the second surface of the silicon carbide substrate;
- forming a metal element layer including a metal element other than titanium that is bondable with silicon to form a silicide, on the titanium layer;
- irradiating the metal element layer with laser light to form an ohmic junction layer having
- a first layer that includes a first silicide of titanium and a first silicide of the metal element other than titanium, directly disposed on the second surface of the silicon carbide substrate, and
- a second layer that includes a second silicide of titanium and a second silicide of the metal element, directly disposed on the first layer, the second layer having a lower titanium concentration than the first layer;
- and
- forming a second electrode on the ohmic junction layer.
Dependencies are inferred from the claim text.