Semiconductor device with a programmable contact and method for fabricating the same
AssigneeNanya Technology Corporation
InventorChin-Ling Huang
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a gate stack positioned on the substrate, a plurality of programmable contacts positioned on the gate stack, a pair of heavily-doped regions positioned adjacent to two sides of the gate stack and in the substrate, and a plurality of first contacts positioned on the pair of heavily-doped regions. A width of the plurality of programmable contacts is less than a width of the plurality of first contacts.
Claims11
A semiconductor device, comprising:
- a substrate;
- a gate stack positioned on the substrate;
- a plurality of contacts positioned on the gate stack;
- a pair of heavily-doped regions positioned adjacent to two sides of the gate stack and in the substrate;
- a plurality of first contacts positioned on the pair of heavily-doped regions;
- and
- a pair of lightly-doped regions positioned adjacent to the pair of heavily-doped regions and in the substrate;
- wherein a width of the plurality of contacts is less than a width of the plurality of first contacts.
A semiconductor device, comprising:
- a substrate;
- a gate stack positioned on the substrate;
- a plurality of contacts positioned on the gate stack;
- a pair of stress regions positioned adjacent to two sides of the gate stack and in the substrate;
- a plurality of first contacts positioned on the pair of stress regions;
- and
- a pair of lightly-doped regions positioned adjacent to the pair of stress regions and in the substrate;
- wherein a width of the plurality of contacts is less than a width of the plurality of first contacts.
Dependencies are inferred from the claim text.