Memory and method for forming the same
AssigneeShanghai Huahong Grace Semiconductor Manufacturing Corporation
InventorTao Yu
Life of this patent
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Abstract
The present disclosure provides a memory and a method for forming the memory. The method includes: providing a base with a first fin and a second fin formed thereon, wherein the first fin comprises an erasing region and a floating gate region on both sides of the erasing region, and a sacrificial layer is disposed on a surface of the erasing region and a surface of the second fin; forming a floating gate structure across the floating gate region on the base; forming a first sidewall film on a top surface and sidewall surfaces of the floating gate structure on the base; removing the sacrificial layer, and forming an opening in the floating gate structure and the first sidewall film; and forming an erasing gate structure in the opening. The memory formed by the method has good performance.
Claims17
A method for forming a memory, comprising:
- providing a base with a first fin formed thereon, wherein the first fin comprises an erasing region and a floating gate region, the floating gate region is adjacent to the erasing region and each side of the erasing region is disposed with the floating gate region, wherein the base is further disposed with a second fin on both sides of the first fin and the second fin elongates along a direction perpendicular to an elongation direction of the first fin, and a surface of the erasing region and a surface of the second fin are covered with a sacrificial layer;
- forming a floating gate structure across the floating gate region on the base, wherein a surface of the floating gate structure is lower than a top surface of the sacrificial layer;
- forming a first sidewall film on the base, wherein the first sidewall film covers a top surface and sidewall surfaces of the floating gate structure, and a top surface of the first sidewall film is flush with the top surface of the sacrificial layer;
- removing the sacrificial layer to form an opening in the floating gate structure and the first sidewall film so as to expose the surface of the erasing region and the surface of the second fin at a bottom of the opening;
- and
- forming an erasing gate structure in the opening, wherein a surface of the erasing gate structure is flush with the top surface of the first sidewall film.
A memory, comprising:
- a base with a first fin formed thereon, wherein the first fin comprises an erasing region and a floating gate region, the floating gate region is adjacent to the erasing region and each side of the erasing region is disposed with the floating gate region, wherein the base is further disposed with a second fin on both sides of the first fin and the second fin elongates along a direction perpendicular to an elongation direction of the first fin;
- a floating gate structure across the floating gate region of the first fin on the base, wherein a surface of the floating gate structure is lower than a top surface of a sacrificial layer;
- a first sidewall disposed on a top surface and sidewall surfaces of the floating gate structure, wherein a top surface of the first sidewall is flush with the top surface of the sacrificial layer;
- and
- an erasing gate structure disposed on the erasing region of the first fin and the second fin, wherein a surface of the erasing gate structure is flush with the surface of the first sidewall.
Dependencies are inferred from the claim text.