Silicon carbide semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorHiroyuki Kamada
Life of this patent
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Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating layer provided on a surface of the silicon carbide substrate, a gate electrode provided on the gate insulating layer, a first insulting layer provided on the gate electrode, a first layer provided on the first insulating layer, a second insulating layer provided on the first insulating layer, and an interconnect layer provided on the second insulating layer. The second insulating layer includes SiN or SiON. The first layer includes one of Ti, TiN, Ta, and TaN. The interconnect layer includes Al or Cu.
Claims19
A silicon carbide semiconductor device comprising:
- a silicon carbide substrate;
- a gate insulating layer provided on a first surface of the silicon carbide substrate;
- a gate electrode provided on the gate insulating layer;
- a first insulting layer provided on the gate electrode;
- a first layer provided on the first insulating layer;
- a second layer provided on the first layer;
- a third layer provided on the second layer;
- a second insulating layer provided on the first insulating layer;
- and
- an interconnect layer provided on the second insulating layer,
- wherein the second insulating layer is provided on the third layer,
- wherein the second insulating layer includes SiN or SiON,
- wherein the first layer includes one of Ti, TiN, Ta, and TaN,
- wherein the second layer includes Ni or TiAlSi,
- wherein the third layer includes one of Ti, TiN, Ta, and TaN, and
- wherein the interconnect layer includes Al or Cu.
A silicon carbide semiconductor device comprising:
- a silicon carbide substrate;
- a gate insulating layer provided on a first surface of the silicon carbide substrate;
- a gate electrode provided on the gate insulating layer;
- a first insulting layer provided on the gate electrode;
- a first layer provided on the first insulating layer;
- a second layer provided on the first layer;
- a second insulating layer provided on the first insulating layer;
- and
- an interconnect layer provided on the second insulating layer,
- wherein the second insulating layer is provided on the second layer,
- wherein the first layer includes one of Ti, TiN, Ta, and TaN,
- wherein the second layer includes one of Ti, TiN, Ta, and TaN,
- wherein the second insulating layer includes SiN or SiON, and
- wherein the interconnect layer includes Al or Cu.
A silicon carbide semiconductor device comprising:
- a silicon carbide substrate;
- a gate insulating layer provided on a first surface of the silicon carbide substrate;
- a gate trench provided on the first surface of the silicon carbide substrate;
- a gate electrode provided on the gate insulating layer;
- a first insulting layer provided on the gate electrode;
- a first layer provided on the first insulating layer;
- a second insulating layer provided on the first insulating layer;
- and
- an interconnect layer provided on the second insulating layer,
- wherein the gate insulating layer is provided on an inner wall of the gate trench,
- wherein the gate electrode is provided on the gate insulating layer at the gate trench,
- wherein the first layer includes one of Ti, TiN, Ta, and TaN,
- wherein the second insulating layer includes SiN or SiON, and
- wherein the interconnect layer includes Al or Cu.
A silicon carbide semiconductor device comprising:
- a silicon carbide substrate;
- a gate insulating layer provided on a first surface of the silicon carbide substrate;
- a gate electrode provided on the gate insulating layer;
- a first insulting layer provided on the gate electrode;
- a first layer provided on the first insulating layer;
- a second insulating layer provided on the first insulating layer;
- an interconnect layer provided on the second insulating laver;
- and
- a drain electrode provided on a second surface of the silicon carbide substrate, opposite to the first surface provided with the gate electrode,
- wherein the first layer includes one of Ti, TiN, Ta, and TaN,
- wherein the second insulating layer includes SiN or SiON, and
- wherein the interconnect layer includes Al or Cu.
Dependencies are inferred from the claim text.