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US 11,081,548 B2Granted
Bipolar transistor
AssigneeRichWave Technology Corp.
InventorsChuan-Chen Chao, Po-Hsiang Yang
Life of this patent
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Abstract
A bipolar transistor includes a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer having a long side and a short side, wherein the long side is parallel with a first direction, and n separate first emitter-contact structures disposed along the first direction on the first elongated emitter mesa, where n is an integer greater than one.
Claims19
A bipolar transistor, comprising:
- a collector layer;
- a base layer on the collector layer;
- a first elongated emitter mesa disposed on the base layer having a long side and a short side, wherein the long side is parallel to a first direction;
- n separate first emitter contact structures disposed along the first direction on the first elongated emitter mesa, wherein n is an integer greater than one, wherein n−1 gaps are disposed between the n separate first emitter contact structures, and the long side of the first elongated emitter mesa has a length L, and wherein a sum of the widths of the n−1 gaps in the first direction is less than L/3;
- and
- a first conductor layer comprising a plurality of contact structures connecting the n separate first emitter contact structures.
3 more elements
Dependencies are inferred from the claim text.