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AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, International Business Machines Corporation
InventorsShay Reboh, Remi Coquand, Nicolas Loubet, Tenko Yamashita, Jingyun Zhang
Estimating the term…
A method for making first and second superimposed transistors, including: making, on a substrate, a stack of several semiconducting nanowires; etching a first nanowire so that a remaining portion of the first nanowire forms a channel of the first transistor; etching a second nanowire arranged between the substrate and the first nanowire, so that a remaining portion of the second nanowire forms a channel of the second transistor and has a greater length than that of the remaining portion of the first nanowire; making second source and drain regions in contact with ends of the remaining portion of the second nanowire; depositing a first dielectric encapsulation layer covering the second source and drain regions and forming vertical insulating portions; making first source and drain regions in contact with ends of the remaining portion of the first nanowire and insulated from the second source and drain regions by the vertical insulating portions.
A method for making at least a first and second superimposed transistors, including at least:
Dependencies are inferred from the claim text.