Nonvolatile memory device
AssigneeKioxia Corporation
InventorKazuhiko Yamamoto
Life of this patent
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Abstract
According to one embodiment, a nonvolatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, a third wiring extending in the second direction and spaced from the second wiring in the first direction. An insulating layer includes a first portion between the second wiring and the third wiring, and a second portion protruding from the first portion in a third direction. A chalcogenide layer is between the first wiring and the second wiring, the first wiring and the third wiring, and also the first wiring and the insulating layer. The chalcogenide layer includes a first layer portion, a second layer portion, and a third layer portion. A concentration of a first element in the third layer portion is higher than that in the first and second layer portions.
Claims20
A nonvolatile memory device, comprising:
- a first wiring extending in a first direction;
- a second wiring extending in a second direction that intersects with the first direction;
- a third wiring extending in the second direction and spaced from the second wiring in the first direction;
- an insulating layer including a first portion between the second wiring and the third wiring in the first direction and a second portion protruding from the first portion in a third direction beyond ends of the second and third wirings in the third direction, the third direction intersecting with the first and second directions;
- and
- a chalcogenide layer between the first wiring and the second wiring, between first wiring and the third wiring, and between the first wiring and insulating layer, wherein
- the chalcogenide layer includes a first layer portion between the first wiring and the second wiring, a second layer portion between the first wiring and the third wiring, and a third layer portion between the first wiring and the insulating layer, a concentration of a first element in the third layer portion being higher than a concentration of the first element in the first layer portion and a concentration of the first element in the second layer portion.
A nonvolatile memory array, comprising:
- a bit line extending in a first direction;
- a first word line extending in a second direction interesting the first direction;
- a second word line extending in the second direction, the second word line being above the first word line in the first direction;
- an insulator film between the first and second word lines in the first direction, the insulator film including a first portion directly between and contacting the first and second word lines and a second portion extending in a third direction from the first portion beyond ends of the first and second word lines, the third direction orthogonal to the first and second directions;
- a memory film having a first film portion between the bit line and the first word line, a second film portion between the bit line and the second word line, and a third film portion between the bit line and the insulator film, wherein
- the first film portion and the second film portion have a same dopant concentration level, and
- the third film portion has a dopant concentration level higher than the first and second film portions.
Dependencies are inferred from the claim text.