Storage device
AssigneeToshiba Memory Corporation
InventorsTakeshi Iwasaki, Katsuyoshi Komatsu, Hiroki Kawai
Life of this patent
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Abstract
A storage device includes a first conductor, a second conductor, a variable resistance layer, a first portion, and a second portion. The variable resistance layer connects with the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided between the first conductor and the first portion and/or between the second conductor and the first portion, and has a second threshold voltage value at which the resistance value changes and which is higher than the first threshold voltage value.
Claims22
A storage device comprising:
- a first conductor;
- a second conductor;
- a variable resistance layer connecting with the first conductor or the second conductor;
- a first portion provided between the first conductor and the second conductor, and having a first threshold voltage value at which the resistance value of the first portion changes, the first portion including a plurality of first layers and a plurality of second layers which are stacked alternately;
- and
- a second portion provided between the first conductor and the first portion and/or between the second conductor and the first portion, and having a second threshold voltage value at which the resistance value of the second portion changes, the second threshold voltage value being higher than the first threshold voltage value, the second portion including a plurality of third layers and a plurality of fourth layers which are stacked alternately.
A storage device comprising:
- a first conductor;
- a second conductor;
- and
- a switching element which is provided between the first conductor and the second conductor, the switching element having a first resistance change tendency when a voltage, applied between the first conductor and the second conductor, is less than a first threshold voltage value, the switching element having a second resistance change tendency, in which a change in resistance value per unit voltage is larger than that in the first resistance change tendency, when the applied voltage is not less than the first threshold voltage value and is less than a second threshold voltage value, and the switching element having a third resistance change tendency, including a region where a resistance value is lower than that at the second threshold voltage value, when the applied voltage is not less than the second threshold voltage value, wherein the first resistance change tendency, the second resistance tendency and the third resistance change tendency are continuous.
A storage device comprising:
- a first conductive layer;
- a second conductive layer;
- a variable resistance layer connecting with the first conductive layer or the second conductive layer;
- a first portion provided between the first conductive layer and the second conductive layer, the first portion including a plurality of first layers and a plurality of a second layers which are stacked alternately, the first layers including a first element comprising at least one chalcogen element selected from tellurium, selenium or sulfur, and a second element comprising at least one conductive element selected from boron, carbon, magnesium, aluminum, silicon or germanium, and containing a nitride;
- and
- a second portion provided between the first conductive layer and the first portion, the second portion including a plurality of third layers and a plurality of a fourth layers which are stacked alternately, the third layers including a first element comprising at least one chalcogen element selected from tellurium, selenium or sulfur, and a second element comprising at least one conductive element selected from boron, carbon, magnesium, aluminum, silicon or germanium, and containing a nitride and silicon.
Dependencies are inferred from the claim text.