Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters

A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters, the method comprising the following steps:

• providing a relaxation substrate comprising a medium, a flow layer on the medium and comprising a first group of blocks having a first viscosity at a relaxation temperature and at the same time a second group of blocks having a second viscosity that is different from the first group of blocks at the relaxation temperature and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter on the flow layer, islands of a first group of islands being located on the blocks of the first group of blocks and islands of a second group of islands being located on the blocks of the second group of blocks;
• and
• heat treating the relaxation substrate at a relaxation temperature that is higher than or equal to a glass transition temperature of at least one block of the flow layer to cause differentiated lateral expansion of the islands of the first and second groups, the lattice parameter of a first group of relaxed islands and the lattice parameter of a second group of relaxed islands then having different values.