Active matrix substrate, x-ray imaging panel with the same, and method of manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorKatsunori Misaki
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Abstract
An active matrix substrate includes a TFT. The TFT includes a gate electrode, a semiconductor layer overlapping the gate electrode with a gate insulating film interposed therebetween, and a source electrode and a drain electrode disposed on the semiconductor layer. The source electrode, the drain electrode, and the semiconductor layer are covered with a first insulating film. The gate insulating film includes a first stepped portion in a portion covering a peripheral portion of the gate electrode. The first insulating film includes a first opening at a position overlapping a portion of the first stepped portion that is not covered with the source electrode and the drain electrode in a plan view.
Claims7
An active matrix substrate comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a gate insulating film covering the gate electrode;
- a semiconductor layer disposed on the gate insulating film and overlapping the gate electrode in a plan view;
- a source electrode disposed on the gate insulating film and overlapping a part of the semiconductor layer;
- a drain electrode disposed on the gate insulating film and separated from the source electrode on the semiconductor layer;
- and
- a first insulating film covering the source electrode, the drain electrode, and the semiconductor layer,
- wherein the gate insulating film includes a first stepped portion in a portion covering a peripheral portion of the gate electrode when the substrate is viewed from a normal direction, and
- the first insulating film includes a first opening at a position overlapping a portion of the first stepped portion that is covered with neither the source electrode nor the drain electrode in a plan view.
Dependencies are inferred from the claim text.