Solid state imaging element and electronic device
AssigneeSony Corporation
InventorSozo Yokogawa
Life of this patent
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Abstract
The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
Claims19
A light detecting device comprising:
- a light detecting element disposed in a silicon layer;
- a first concave-convex pattern on a first surface on the silicon layer, the first surface being a light receiving surface of the silicon layer;
- an isolation structure adjacent to the light detecting element and disposed in the silicon layer;
- a metal film disposed in the isolation structure;
- and
- an interconnection layer disposed below the silicon layer, the interconnection layer including a reflecting mirror structure, wherein at least a portion of the reflecting mirror structure extends under the isolation structure, wherein the first concave-convex pattern comprises inverted triangular shapes in a cross-sectional view, and wherein a depth of at least one of the inverted triangular shapes in the first concave-convex pattern is less than a width of a widest section of the at least one of the inverted triangular shapes.
An electronic device, comprising:
- a light detecting element disposed in a silicon layer;
- a first concave-convex pattern on a first surface on the silicon layer, the first surface being a light receiving surface of the silicon layer;
- an isolation structure adjacent to the light detecting element and disposed in the silicon layer;
- a metal film disposed in the isolation structure;
- and
- an interconnection layer disposed below the silicon layer, the interconnection layer including a reflecting mirror structure, wherein at least a portion of the reflecting mirror structure extends under the isolation structure, wherein the first concave-convex pattern comprises inverted triangular shapes in a cross-sectional view, and wherein a depth of at least one of the inverted triangular shapes in the first concave-convex pattern is less than a width of a widest section of the at least one of the inverted triangular shapes.
Dependencies are inferred from the claim text.