Semiconductor device and method for manufacturing the same

A light-emitting device comprising a pixel, the pixel comprising:

• a transistor comprising:
• a gate electrode;
• a first oxide semiconductor layer;
• a source electrode in contact with the first oxide semiconductor layer;
• and
• a drain electrode in contact with the first oxide semiconductor layer;
• a capacitor comprising:
• a first conductive layer;
• and
• a second oxide semiconductor layer over the first conductive layer;
• a first insulating layer over the second oxide semiconductor layer;
• a second conductive layer over the first insulating layer, the second conductive layer being electrically connected to the second oxide semiconductor layer through an opening in the first insulating layer;
• an interlayer insulating layer covering the transistor, the capacitor, and the second conductive layer;
• a planarization insulating layer over the interlayer insulating layer;
• a light-emitting element comprising a pixel electrode;
• and
• a color filter layer between the interlayer insulating layer and the planarization insulating layer,
• wherein the pixel electrode is electrically connected to the transistor through an opening in the interlayer insulating layer and the planarization insulating layer,
• wherein the color filter layer does not overlap with the gate electrode and the second oxide semiconductor layer, and
• wherein the pixel electrode is isolated from the second conductive layer.