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US 11,081,500 B2Granted
Semiconductor structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTe-An Chen
Life of this patent
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Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate and an oxidation region formed on the semiconductive substrate. The oxidation region includes a stage with a first width along a horizontal direction. The semiconductor structure further includes a fin formed on a top surface of the stage. A method for forming the semiconductor structure is also provided.
Claims19
A semiconductor structure, comprising:
- a semiconductive substrate;
- an oxidation region formed on the semiconductive substrate, wherein the oxidation region includes a stage with a first width (W1) along a horizontal direction (D1);
- a fin formed on a top surface of the stage;
- an insulator covering a portion of the top surface of the stage, and the fin is partially surrounded by the insulator;
- and
- a gate dielectric formed on the insulator and partially surrounding the fin,
- wherein the top surface of the stage of the oxidation region is coplanar with a top surface of the semiconductive substrate.
4 more elements
A semiconductor structure, comprising:
- a semiconductive substrate;
- several fins formed on the semiconductive substrate;
- an oxidation region between the semiconductive substrate and the fins, wherein the oxidation region includes a trench between two of the fins, and
- a fin formed on and in contact with the semiconductive substrate.
1 more element
A semiconductor structure, comprising:
- a semiconductive substrate;
- a first fin formed on the semiconductive substrate;
- a second fin formed on the semiconductive substrate;
- and
- an oxidation region between the semiconductive substrate and the first fin, wherein the oxidation region includes a stage under the first fin, and a trench adjacent to the stage, and a bottom of the trench is lower than a top surface of the stage;
- and
- an insulator covering a portion of the top surface of the stage.
4 more elements
Dependencies are inferred from the claim text.