Semiconductor memory

A semiconductor memory comprising:

• a first conductor and a first insulator that are alternately stacked along a first direction;
• and
• a plurality of memory pillars that penetrates through the stacked first conductor and first insulator, each memory pillar of the plurality of memory pillars including a semiconductor along the first direction, a tunnel insulating film that surrounds a side surface of the semiconductor, a second insulator that surrounds a side surface of the tunnel insulating film, and a block insulating film that surrounds a side surface of the second insulator, wherein
• the plurality of memory pillars include a first memory pillar,
• the first conductor is disposed between adjacent first insulators in the first direction and includes a first conductive part, a second conductive part, and a first dissimilar conductive part, wherein the first conductive part includes a first portion adjacent to the first memory pillar,
• the first conductive part is in contact with adjacent first insulators and widens along a second direction crossing the first direction,
• the second conductive part is disposed between a first block insulating film of the first memory pillar and the first portion of the first conductive part, is in contact with the first block insulating film of the first memory pillar and the first portion of the first conductive part, and is formed from a same material as for the first portion of the first conductive part, and
• the first dissimilar conductive part is a pair of conductive parts that sandwiches the second conductive part along the first direction between the first block insulating film of the first memory pillar and the first portion of the first conductive part, and is formed from a material different from the material for the first portion of the first conductive part and the second conductive part.