Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorTetsuaki Utsumi
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Abstract
A semiconductor memory device includes a semiconductor substrate, transistors formed in an upper surface of the semiconductor substrate, a stacked body provided on the semiconductor substrate, a first contact, and a second contact. The transistors are arranged along a first direction. A minimum period of an arrangement of the transistors is a first period. The stacked body includes electrode films. A configuration of a first portion of the stacked body is a staircase-like having terraces. A first region and a second region are set along the first direction in the first portion. A length in the first direction of the terrace disposed in the second region is longer than the first period. A length in the first direction of the terrace disposed in the first region is shorter than the first period.
Claims20
A semiconductor memory device, comprising:
- a semiconductor substrate having a surface extending in a first direction and a second direction crossing the first direction,
- a plurality of transistors formed in the surface of the semiconductor substrate, the transistors being arranged periodically along the first direction,
- a first stacked body including a plurality of first electrode films stacked to be separated from each other along a third direction crossing the first direction and the second direction, the first stacked body including a first portion which has a staircase-like configuration and a second portion which is adjacent to the first portion in the first direction,
- a second stacked body including a plurality of second electrode films stacked to be separated from each other along the third direction and being adjacent to the first stacked body in the second direction, the second stacked body including a third portion which has a staircase-like configuration and at least partially overlaps with the transistors when viewed in the third direction and a fourth portion which is adjacent to the third portion in the first direction,
- a plurality of first semiconductor members each piercing the first electrode films from an upper most one thereof to a lower most one thereof,
- a plurality of second semiconductor members each piercing the second electrode films from an upper most one thereof to a lower most one thereof,
- a plurality of first charge storage members provided between the first semiconductor members and the first electrode films, respectively,
- a plurality of second charge storage members provided between the second semiconductor members and the second electrode films, respectively,
- a first contact having one end which is connected to one of the first electrode films, the first contact overlapping with the first portion when viewed in the third direction,
- a second contact having one end which is connected to a source or a drain of one of the transistors, the second contact overlapping with the third portion when viewed in the third direction, and
- a first interconnect connecting between the other end of the first contact and the other end of the second contact.
A semiconductor memory device, comprising:
- a semiconductor substrate having a surface extending in a first direction and a second direction crossing the first direction,
- a plurality of transistors formed in the surface of the semiconductor substrate, the transistors being arranged periodically along the first direction,
- a plurality of stacked bodies arranged along the second direction above the transistors in a third direction crossing the first direction and the second direction, each of the stacked bodies including a plurality of first electrode films stacked along the third direction to form a first portion which has a staircase-like configuration and a second portion which is adjacent to the first portion in the first direction,
- a plurality of semiconductor members each piercing the first electrode films of a corresponding one of the stacked bodies from an upper most one thereof to a lower most one thereof,
- a plurality of charge storage members provided between the first semiconductor members and the first electrode films, respectively,
- a first contact having one end which is connected to one of the first electrode films of a first one of the stacked bodies, the first contact overlapping with the first portion of the first one of the stacked bodies when viewed in the third direction,
- a second contact having one end which is connected to a source or a drain of one of the transistors, the second contact overlapping with the third portion of a second one of the stacked bodies adjacent to the first one of the stacked bodies in the second direction when viewed in the third direction, and
- a first interconnect connecting between the other end of the first contact and the other end of the second contact.
Dependencies are inferred from the claim text.