Semiconductor structure and method for fabricating the same
AssigneeXia Tai Xin Semiconductor (Qing Dao) Ltd.
InventorsChang-Hyeon Nam, Injoon Yeo
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Abstract
A semiconductor structure is disclosed, which comprises a substrate, a bit line (BL) stack feature and a BL spacer. The substrate has a cell area and a periphery area defined thereon. The bit line stack feature formed over an active region in the cell area, comprises a buffer liner having a U-shaped profile that opens upwardly in a cross section thereof and defining an inner surface, a BL conductor disposed in the U-shaped profile on the inner surface, and a capping layer over the BL conductor. The BL spacer covers sidewall surfaces of the BL stack feature.
Claims11
A semiconductor structure, comprising:
- a substrate having a cell area and a periphery area defined thereon;
- a bit line stack feature over an active region in the cell area, the BL stack feature comprising
- a buffer liner having a U-shaped profile that opens upwardly in a cross section thereof and defining an inner surface,
- a BL conductor disposed in the U-shaped profile on the inner surface, and
- a capping layer over the BL conductor;
- and
- a BL spacer covering sidewall surfaces of the BL stack feature.
Dependencies are inferred from the claim text.