CMOS circuit with a group III-nitride transistor and method of providing same

A method comprising:

• fabricating an n-type transistor of a complementary metal-oxide-semiconductor (CMOS) circuit, including:
• depositing a group III-nitride (III-N) semiconductor material on a substrate;
• and
• forming a layer comprising at least one of aluminum (Al), gallium (Ga), or nitrogen (N) on a surface of the group III-N semiconductor material;
• forming an electrode coupled to the n-type transistor;
• and
• fabricating a p-type transistor of the CMOS circuit, including forming a channel region comprising a group III-V compound, wherein the channel region is configured to conduct current in a direction which is orthogonal to the surface of the group III-N semiconductor material, wherein the electrode is directly coupled to each of the n-type transistor and the p-type transistor.

A system comprising:

• a complementary metal-oxide-semiconductor (CMOS) circuit comprising:
• an n-type transistor comprising:
• a group III-nitride (III-N) semiconductor material disposed on a substrate;
• and
• a layer comprising at least one of aluminum (Al), gallium (Ga), or nitrogen (N), the layer disposed on a surface of the group III-N semiconductor material;
• a p-type transistor including a channel region comprising a group III-V compound, wherein the channel region is configured to conduct current in a direction which is orthogonal to the surface of the group III-N semiconductor material;
• and
• an electrode directly coupled to each of the n-type transistor and the p-type transistor;
• and
• a display device coupled to the CMOS circuit, the display device to display an image based on a signal communicated with the CMOS circuit.