Semiconductor device with an IGBT region and a non-switchable diode region

A semiconductor device, comprising:

• a semiconductor substrate comprising a front side, a back side opposite the front side, a drift layer, and a body layer arranged between the front side and the drift layer and forming a pn-junction with the drift layer;
• a front metallization arranged on the front side and in Ohmic connection with the body layer;
• a gate metallization;
• an IGBT cell region comprising gate electrodes in Ohmic connection with the gate metallization, and electrically insulated from the semiconductor substrate;
• and
• a free-wheeling diode region adjacent to the IGBT cell region and comprising field electrodes in Ohmic connection with the front metallization, and separated from the semiconductor substrate and the gate electrode,
• wherein the gate electrodes are arranged in respective first trenches extending through the body layer in a first vertical cross-section perpendicular to the front side,
• wherein the field electrodes are arranged in respective second trenches extending through the body layer in a second vertical cross-section parallel to and spaced apart from the first vertical cross-section,
• wherein in a normal projection onto a horizontal plane parallel to the front side, the field electrodes are substantially shaped as second stripes, and the gate electrodes are substantially shaped as first stripes arranged in a virtual extension of the second stripes,
• wherein the gate electrodes extend into an additional trench and are connected to one another by an electrode formed in the additional trench,
• wherein the additional trench extends longitudinal in a direction which is transverse to a longitudinal direction of the first trenches and of the second trenches,
• wherein the free-wheeling diode region and the adjacent IGBT cell region are separated from each other by the additional trench.