Interconnect structure having a fluorocarbon layer
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorMing Zhou
Life of this patent
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Abstract
An interconnect structure includes a metal interconnect layer, a dielectric layer on the metal interconnect layer, a fluorocarbon layer on the dielectric layer, a metal interconnect extending through the fluorocarbon layer and the dielectric layer to the metal interconnect layer. The metal interconnect includes a first portion extending through the fluorocarbon layer and into an upper portion of the dielectric layer and a second portion below the first portion and extending through a lower portion of the dielectric layer to the metal interconnect layer.
Claims12
An interconnect structure, comprising:
- a metal interconnect layer;
- a dielectric layer on the metal interconnect layer;
- a fluorocarbon layer on the dielectric layer;
- a metal interconnect extending through the fluorocarbon layer and the dielectric layer to the metal interconnect layer, the metal interconnect comprising a first portion extending through the fluorocarbon layer and into the dielectric layer and two second portions below the first portion and extending through the dielectric layer to the metal interconnect layer, wherein:
- the two second portions are separated from each other by a portion of the dielectric layer and connected through the first portion,
- a sidewall of the fluorocarbon layer is in directly contact with a sidewall of the first portion of the metal interconnect, and
- the metal interconnect has an upper surface flush with an upper surface of the fluorocarbon layer.
Dependencies are inferred from the claim text.