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US 11,081,470 B2Granted
Semiconductor device and method of manufacturing thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsWon Geol Lee, Won Chul Do, Ji Hun Yi
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Abstract
Various aspects of this disclosure provide a semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising a stacked die structure and a method of manufacturing thereof.
Claims20
A semiconductor device comprising:
- a first substrate (S1) comprising a first signal distribution structure and a first dielectric structure, the first substrate comprising a first S1 side facing a first direction, a second S1 side facing a second direction opposite the first direction, and a lateral S1 side that extends between the first and second S1 sides;
- a vertical interconnect on the first S1 side, the vertical interconnect comprising a first interconnect end facing the first direction, a second interconnect end facing the second direction and coupled to the first S1 side, and a lateral interconnect side;
- a first semiconductor die (SD1) comprising a first SD1 side facing the first direction, a second SD1 side facing the second direction, and a lateral SD1 side that extends between the first and second SD1 sides;
- first conductive bumps that couple the second SD1 side to the first S1 side;
- a second semiconductor die (SD2) comprising a first SD2 side facing the first direction, a second SD2 side facing the second direction, and a lateral SD2 side that extends between the first and second SD2 sides, where the second SD2 side is coupled to the first SD1 side such that there is no intervening substrate between the first and second semiconductor dies;
- a second substrate on the first interconnect end and on the first SD2 side, the second substrate comprising a second signal distribution structure and a second dielectric structure;
- and
- an encapsulating material between the first substrate and the second substrate, where the encapsulating material encapsulates at least the lateral interconnect side, the lateral SD1 side, and the lateral SD2 side, and the encapsulating material contacts and covers the first dielectric structure.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- providing a first substrate (S1) comprising a first signal distribution structure and a first dielectric structure, the first substrate comprising a first S1 side facing a first direction, a second S1 side facing a second direction opposite the first direction, and a lateral S1 side that extends between the first and second S1 sides;
- forming a vertical interconnect on the first S1 side, the vertical interconnect comprising a first interconnect end facing the first direction, a second interconnect end facing the second direction and coupled to the first S1 side, and a lateral interconnect side;
- providing a first semiconductor die (SDI) comprising a first SD1 side facing the first direction, a second SD1 side facing the second direction, and a lateral SD1 side that extends between the first and second SD1 sides;
- utilizing first conductive bumps to couple the second SD1 side to the first S1 side;
- providing a second semiconductor die (SD2) comprising a first SD2 side facing the first direction, a second SD2 side facing the second direction, and a lateral SD2 side that extends between the first and second SD2 sides;
- coupling the second SD2 side to the first SD1 side such that there is no intervening substrate between the first and second semiconductor dies;
- forming a second substrate on the first interconnect end and on the first SD2 side, the second substrate comprising a second signal distribution structure and a second dielectric structure;
- and
- forming an encapsulating material between the first substrate and the second substrate, where the encapsulating material encapsulates at least the lateral interconnect side, the lateral SD1 side, and the lateral SD2 side, and the encapsulating material contacts and covers the first dielectric structure.
6 more elements
Dependencies are inferred from the claim text.