Methods and systems for manufacturing pillar structures on semiconductor devices

A method of manufacturing a semiconductor device, the semiconductor device having a conductive substrate having a first surface partially covered by a passivation material and a second surface opposite the first surface, the method comprising:

• covering at least a portion of the first surface and the passivation material with a layer of conductive material, the layer of conductive material having a first side opposite the conductive substrate;
• depositing a first material onto the layer of conductive material thereby forming bases for a first pillar and a second pillar;
• depositing a second material onto the first material;
• removing the layer of conductive material from portions of the passivation material and the first surface of the conductive substrate outside of the first and second pillars;
• and
• undercutting the layer of conductive material between the layer of first material of the first pillar and the conductive substrate;
• wherein the first pillar is positioned over a portion of the conductive substrate completely covered by the passivation material.

A method of manufacturing a semiconductor device, the method comprising:

• forming a mask on a seed structure, wherein the mask has a first set of openings that expose areas of the seed structure that are electrically coupled to live circuitry on a side of the seed structure opposite the mask, and wherein the mask has a second set of openings that expose areas of the seed structure that are entirely in direct contact with a passivation material positioned between the seed structure and the live circuitry;
• plating a first material onto the exposed areas of the seed structure;
• depositing a second material into the openings over the first material, thereby forming a first set of pillars within the first set of opening and a second set of pillar within the second set of openings, wherein the second material is different from the first material;
• removing at least a portion of the mask to expose portions of the seed structure between the pillars;
• removing the exposed portions of the seed structure between the pillars;
• and
• undercutting the seed structure on a side of the first material of the second set of pillars opposite the second material of the second set of pillars.